Bidirectional transistors represent an emerging class of power devices capable of blocking voltage in both directions, thanks to two independently controlled gate electrodes. Through monolithic integration, bidirectional GaN High-Electron-Mobility-Transistors (HEMTs) can be realized using only a quarter of the chip area required by two discrete unidirectional devices in a common-drain configuration. This makes them a pivotal technology for enabling compact and efficient next-generation power converter topologies. During your Master thesis, you will extend an existing measurement setup to be able to accurately characterize dynamic behavior of state-of-the-art monolithic bidirectional GaN HEMTs. You will develop a test fixture for Gate-Charging and Double-Pulse-Tests to independently bias the two gate electrodes, allowing you to examine the Device-Under-Test in both of its operating modes. Your measurement results will then be compared to simulations of an existing compact model. This will be used to validate modelling concepts and further enhance their development. Last but not least, your thesis will support a publicly-funded project and a doctoral thesis.